ELECTROMIGRATION IN THIN GOLD FILMS ON MOLYBDENUM SURFACES.BLECH IA; KINSBRON E.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 327-334; BIBL. 12 REF.Article

REMOVING HARDENED ORGANIC MATERIALS DURING FABRICATION OF INTEGRATED CIRCUITSVRATNY F; KINSBRON E.1982; MATERIALS LETTERS; ISSN 511080; NLD; DA. 1982; VOL. 1; NO 3-4; PP. 85-90; BIBL. 28 REF.Article

INTERFACE REACTION OF GOLD FILMS WITH N-TYPE GA_0.7AL_0.3AS AND GAASVANDENBERG JM; KINSBRON E.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 65; NO 2; PP. 259-265; BIBL. 10 REF.Article

A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINIUM THIN-FILM STRIPES = MODELE POUR LA VARIATION AVEC L'EPAISSEUR DES DUREES DE VIE D'ELECTRODIFFUSION DANS DES BANDES DE COUCHES MINCES D'ALKINSBRON E.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 12; PP. 968-970; BIBL. 8 REF.Article

OPTICAL PROPERTIES OF AU: SAMPLE EFFECTS = PROPRIETES OPTIQUES DE AU: EFFETS D'ECHANTILLONASPNES DE; KINSBRON E; BACON DD et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 8; PP. 3290-3299; BIBL. 55 REF.Article

DISSOCIATION OF GAAS AND GA⁰,7)AL⁰,3)AS DURING ALLOYING OF GOLD CONTACT FILMSKINSBRON E; GALLAGHER PK; ENGLISH AT et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 5; PP. 517-524; BIBL. 15 REF.Article

CRYSTALLIZATION OF AMORPHOUS SILICON FILMS DURING LOW PRESSURE CHEMICAL VAPOR DEPOSITIONKINSBRON E; STERNHEIM M; KNOELL R et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 835-837; BIBL. 23 REF.Article

THE THRESHOLD CURRENT DENSITY AND INCUBATION TIME TO ELECTROMIGRATION IN GOLD FILMS.KINSBRON E; BLECH IA; KOMEN Y et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 46; NO 2; PP. 139-150; BIBL. 15 REF.Article

CHEMICAL REACTION OF SULFUR DIOXIDE AT HIGH HUMIDITY AND TEMPERATURE: IMPLICATIONS FOR ACCELERATED TESTINGFLAMM DL; BACON DD; KINSBRON E et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 679-685; BIBL. 21 REF.Article

FAILURE OF SMALL THIN-FILM CONDUCTORS DUE TO HIGH CURRENT-DENSITY PULSESKINSBRON E; MELLIAR SMITH CM; ENGLISH AT et al.1979; IEEE TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 1; PP. 22-26; BIBL. 14 REF.Article

Room temperature interdiffusion study of Au/Ga thin film couples = Etude de l'interdiffusion à température ambiante dans des couples de couches minces Au/GaNAKAHARA, S; KINSBRON, E.Thin solid films. 1984, Vol 113, Num 1, pp 15-26, issn 0040-6090Article

Electromigration-induced failure by edge displacement in fine-line aluminum-0.5% copper thin film conductors = Rupture induite par électrodiffusion par déplacement du bord dans des conducteurs en couches minces de lignes fines de Al-0,5% CuENGLISH, A. T; KINSBRON, E.Journal of applied physics. 1983, Vol 54, Num 1, pp 268-274, issn 0021-8979Article

Electromigration transport mobility associated with pulsed direct current in fine-grained evaporated Al-0.5% Cu thin films = Mobilité de transport par électrodiffusion avec courant direct en impulsion dans des couches minces de Al-0,5% Cu à grains fins préparées par évaporationENGLISH, A. T; KINSBRON, E.Journal of applied physics. 1983, Vol 54, Num 1, pp 275-280, issn 0021-8979Article

Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVASPNES, D. E; STUDNA, A. A; KINSBRON, E et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 2, pp 768-779, issn 0163-1829Article

Properties of thermal oxides grown on phosphorus in situ doped polysiliconSTERNHEIM, M; KINSBRON, E; ALSPECTOR, J et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 8, pp 1735-1740, issn 0013-4651Article

Analysis of electromigration effects within various types of aluminum test structuresWEIS, E. A; KINSBRON, E; SNYDER, M et al.Reliability engineering & systems safety. 1992, Vol 37, Num 1, pp 57-64, issn 0951-8320Article

Electromigration behavior analysis of aluminum alloys thin film conductors using maximum likelihood methodsWEIS, E. A; KINSBRON, E; SNYDER, M. M et al.Microelectronics and reliability. 1992, Vol 32, Num 6, pp 887-900, issn 0026-2714Article

High temperature stability of PtSi formed by reaction of metal with silicon or by cosputteringMURARKA, S. P; KINSBRON, E; FRASER, D. B et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6943-6951, issn 0021-8979Article

Oxidation of arsenic implanted polycrystalline siliconKINSBRON, E; MURARKA, S. P; SHENG, T. T et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1555-1560, issn 0013-4651Article